Abstract — FDSOI technology has been proposed as an alternative device scaling path which offers benefits of tunable, superior electrostatics transistor while maintaining simplicity of planar integration. New device type and integration elements brought up challenges in device and process characterization and monitoring across the whole lifecycle of the technology. This paper presents successful application of fast cycle-time electrical characterization to ramp FDSOI technology to mass production.
Keywords— FDSOI, Technology Development, Yield Ramp